power transistors 1 publication date: september 2003 sjd00211bed 2SD1707 silicon npn epitaxial planar type for power switching complementary to 2sb1156 features ? low collector-emitter saturation voltage v ce(sat) ? satisfactory linearity of forward current transfer ratio h fe ? large collector current i c ? full-pack package which can be installed to the heat sink with one screw absolute maximum ratings t c = 25 c electrical characteristics t c = 25 c 3 c 15.0 0.3 5.0 0.2 11.0 0.2 2.0 0.2 2.0 0.1 0.6 0.2 1.1 0.1 5.45 0.3 10.9 0.5 123 21.0 0.5 16.2 0.5 solder dip (3.5) 15.0 0.2 (0.7) 3.2 0.1 (3.2) unit: mm 1: base 2: collector 3: emitter eiaj: sc-92 top-3f-a1 package note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification parameter symbol rating unit collector-base voltage (emitter open) v cbo 130 v collector-emitter voltage (base open) v ceo 80 v emitter-base voltage (collector open) v ebo 7v collector current i c 20 a peak collector current i cp 30 a collector power dissipation p c 100 w t a = 25 c 3.0 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-emitter voltage (base open) v ceo i c = 10 ma, i b = 080v collector-base cutoff current (emitter open) i cbo v cb = 100 v, i e = 010 a emitter-base cutoff current (collector open) i ebo v eb = 5 v, i c = 050 a forward current transfer ratio h fe1 v ce = 2 v, i c = 0.1 a 45 ? h fe2 * v ce = 2 v, i c = 3 a 90 260 h fe3 v ce = 2 v, i c = 10 a 30 collector-emitter saturation voltage v ce(sat)1 i c = 8 a, i b = 0.4 a 0.5 v v ce(sat)2 i c = 20 a, i b = 2 a 1.5 base-emitter saturation voltage v be(sat)1 i c = 8 a, i b = 0.4 a 1.5 v v be(sat)2 i c = 20 a, i b = 2 a 2.5 transition frequency f t v ce = 10 v, i c = 0.5 a, f = 1 mhz 20 mhz turn-on time t on i c = 8 a, i b1 = 0.8 a, i b2 = ? 0.8 a 0.5 s storage time t stg v cc = 50 v 2.0 s fall time t f 0.2 s rank q p h fe2 90 to 180 130 to 260
2SD1707 2 sjd00211bed v ce(sat) ? i c v be(sat) ? i c h fe ? i c p c ? t a i c ? v ce v ce(sat) ? i c f t ? i c t on , t stg , t f ? i c safe operation area 0 120 100 80 60 40 20 0 150 25 125 50 100 75 collector power dissipation p c (w) ambient temperature t a ( c) (1)t c =ta (2)with a 100 100 2mm al heat sink (3)without heat sink (1) (3) (2) 012 210 48 6 0 4 8 12 20 16 collector current i c (a) collector-emitter voltage v ce (v) t c =25?c i b =200ma 140ma 120ma 100ma 80ma 60ma 40ma 20ma 0.1 1 10 0.01 10 1 0.1 collector-emitter saturation voltage v ce(sat) (v) collector current i c (a) (1) i c /i b =10 (2) i c /i b =20 t c =25?c (1) (2) 0.1 1 10 0.01 10 1 0.1 collector-emitter saturation voltage v ce(sat) (v) collector current i c (a) i c /i b =10 t c =100?c 25?c ?5?c 0.01 0.01 0.1 1 10 100 0.1 1 10 base-emitter saturation voltage v be(sat) (v) collector current i c (a) t c =?5?c 25?c 100?c i c /i b =10 0.1 10 1 1 10 100 1 000 forward current transfer ratio h fe collector current i c (a) v ce =2v t c =100?c 25?c ?5?c 0.01 0.1 1 10 0.1 1 10 100 1000 collector current i c (a) transition frequency f t (mhz) v ce =10v f=1mhz ta=25?c 0.01 0.1 1 10 100 08 26 4 turn-on time t on , storage time t stg , fall time t f ( s ) collector current i c (a) pulsed t w =1ms duty cycle=1% i c /i b =10(i b1 =?i b2 ) v cc =50v t c =25?c t stg t f t on 0.01 1 0.1 1 10 100 10 100 1 000 collector current i c (a) collector-emitter voltage v ce (v) non repetitive pulse t c =25?c i cp i c t=10ms t=1ms dc
2SD1707 3 sjd00211bed r th ? t 10 ? 1 1 10 10 2 10 4 10 3 10 3 10 4 10 2 10 1 10 ? 1 10 ? 3 10 ? 2 10 ? 4 time t (s) thermal resistance r th ( c/w) note: r th was measured at ta=25?c and under natural convection. (1)p t =10v 0.2a(2w) and without heat sink (2)p t =10v 1.0a(10w) and with a 100 100 2mm al heat sink (1) (2)
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